Cikkszám R6006ANDTL Gyártó ROHM Semiconductor Kategóriák MOSFET RoHS Adatlap R6006ANDTL Leírás MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST
Gyártó ROHM Semiconductor Kategóriák MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Pd - Power Dissipation 40 W Qg - Gate Charge 15 nC Rds On - Drain-Source Resistance 900 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V