Cikkszám TK100S04N1L,LQ Gyártó Toshiba Kategóriák MOSFET RoHS Adatlap TK100S04N1L,LQ Leírás MOSFET UMOSVIII 40V 2.3m max(VGS=10V) DPAK
Gyártó Toshiba Kategóriák MOSFET Channel Mode Enhancement Id - Continuous Drain Current 100 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 100 W Qg - Gate Charge 76 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 1.9 mOhms Technology SI Tradename U-MOSVIII-H Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V