Cikkszám TK10A60E,S4X Gyártó Toshiba Kategóriák MOSFET RoHS Adatlap TK10A60E,S4X Leírás MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS
Gyártó Toshiba Kategóriák MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Pd - Power Dissipation 45 W Qg - Gate Charge 40 nC Rds On - Drain-Source Resistance 750 mOhms Technology SI Tradename DTMOSIV Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V