Cikkszám R6002END3TL1 Gyártó ROHM Semiconductor Kategóriák MOSFET RoHS Adatlap R6002END3TL1 Leírás MOSFET Nch 600V 2A TO-252 (DPAK)
Gyártó ROHM Semiconductor Kategóriák MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1.7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 26 W Qg - Gate Charge 6.5 nC Rds On - Drain-Source Resistance 3.4 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V