Cikkszám R6011END3TL1 Gyártó ROHM Semiconductor Kategóriák MOSFET RoHS Adatlap R6011END3TL1 Leírás MOSFET 600V N-CH 11A POWER MOSFET
Gyártó ROHM Semiconductor Kategóriák MOSFET Channel Mode Enhancement Id - Continuous Drain Current 11 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 124 W Qg - Gate Charge 32 nC Rds On - Drain-Source Resistance 390 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V