Cikkszám R6025JNZ4C13 Gyártó ROHM Semiconductor Kategóriák MOSFET RoHS Adatlap R6025JNZ4C13 Leírás MOSFET 600V N-CH 25A POWER
Gyártó ROHM Semiconductor Kategóriák MOSFET Channel Mode Enhancement Id - Continuous Drain Current 25 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 306 W Qg - Gate Charge 57 nC Rds On - Drain-Source Resistance 182 mOhms Technology SI Tradename PrestoMOS Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V